Semiconductor Products
HV IGBT Modules
Introduction:
The high voltage IGBT modules utilize the fourth generation DMOS+ chips from CRRC, featuring low conduction voltage drop, soft turn-off characteristics, positive temperature coefficient, and ease of parallel operation.
Main Parameters:
- Collector-Emitter Voltage (V): 3300-6500
- Collector DC Current (A): 250-1600
- Maximum (Equivalent) Junction Temperature (℃): 125-150
Medium and low voltage IGBT modules
Introduction:
The medium and low voltage IGBT modules utilize the sixth generation fine trench chips from CRRC, featuring high current density, low switching loss, and high operating junction temperature.
Main Parameters:
- Collector-Emitter Voltage (V): 950-1700
- Collector DC Current (A): 100-3600
- Maximum (Equivalent) Junction Temperature (℃): 125-150
Press-Pack IGBT modules
Introduction:
The Press-Pack IGBT modules use the fourth generation DMOS+ chips from CRRC, featuring low conduction voltage drop, low switching loss, and soft turn-off characteristics.
Main Parameters:
- Collector-Emitter Voltage (V): 4500-6500
- Collector DC Current (A): 1500-5000
- Maximum (Equivalent) Junction Temperature (℃): 125-135
Automotive IGBT modules
Introduction:
The automotive IGBT modules use CRRC's sixth-generation fine trench chips, offering high current density, low switching loss, and high operating junction temperature.
Main Parameters:
- Collector-Emitter Voltage (V): 750-1200
- Collector DC Current (A): 400-950
- Maximum (Equivalent) Junction Temperature (℃): 150-175
FRD modules
Introduction:
The FRD modules utilize CRRC's sixth-generation injection efficiency control FRD, featuring low conduction loss, soft recovery characteristics, positive temperature coefficient, and high operating junction temperature.
Main Parameters:
- Collector-Emitter Voltage (V): 1200-6500
- Collector DC Current (A): 100-3600
- Maximum (Equivalent) Junction Temperature (℃): 125-150
SBD Chips
Introduction:
SBD (Schottky Barrier Diode) chips feature a positive temperature coefficient, high voltage resistance, high surge capability, high current density, and low specific on-resistance.
Main Parameters:
- Reverse Repetitive Peak Voltage (V): 1200-3300
- Forward Current (A): 10-47
- Operating Junction Temperature (℃): -40 to 150
MOSFET Chips
Introduction:
Automotive-grade SiC MOSFET chips feature high current density, low specific on-resistance, and high operating frequency, making them suitable for new energy vehicles and charging stations.
Main Parameters:
- Breakdown Voltage (V): 1200-3300
- Forward Current (A): 32-60
- Operating Junction Temperature (℃): -40 to 175
SiC Modules
Introduction:
The SiC modules utilize CRRC's second-generation SiC chips, featuring a positive temperature coefficient and high surge capability.
Main Parameters:
- Rated Voltage (V): 1200-3300
- Rated Current (A): 500-1600
- Operating Junction Temperature (℃): 75-95
Free Floating Rectifier Diodes
Introduction:
The Free Floating Rectifier Diodes
is manufactured using advanced press-fit technology. It covers sizes from 3.5 inches to 6 inches and voltage levels from 1600V to 8500V. These devices have high parameter consistency, making them suitable for extensive series and parallel use.
Main Parameters:
- Reverse Repetitive Peak Voltage (V): 1600-8000
- Forward Peak Current (A): 3000-6000
- Operating Junction Temperature (℃): 150-175
Alloying Rectifier Diodes
Introduction:
The Alloying Rectifier Diodes is manufactured using sintering technology, with sizes concentrated at 3.5 inches and below, and voltage levels ranging from 600V to 8500V. These devices offer high cost-effectiveness, making them suitable for general industrial applications.
Main Parameters:
- Reverse Repetitive Peak Voltage (V): 600-8500
- Forward Peak Current (A): 800-3000
- Operating Junction Temperature (℃): 150-190
Full Floating Thyristor
Introduction:
The Full Floating Thyristor is manufactured using full pressure contact technology. Covering sizes from 1.5 inches to 7 inches, it spans voltage levels from 1800V to 8500V. These devices feature higher current capacity, greater voltage capability, and enhanced reliability.
Main Parameters:
- Reverse Repetitive Peak Voltage (V): 1400-8000
- Average On-state Current (A): 430-7670
- Operating Junction Temperature (℃): 115-125
Fast Switching Thyristors
Introduction:
The Fast Switching Thyristors are manufactured using sintering technology. Covering sizes from 1 inch to 6 inches, it spans voltage levels from 600V to 5200V. This device offers high cost-effectiveness and has outstanding advantages in the medium to low voltage fields.
Main Parameters:
- Reverse Repetitive Peak Voltage (V): 600-5200
- Average On-state Current (A): 320-3310
- Operating Junction Temperature (℃): 125
Fast Diodes
Introduction:
The fast Diodes is suitable for medium-frequency fast switching applications ranging from 200Hz to 2000Hz. It features low turn-off time and low turn-off losses.
Main Parameters:
- Reverse Repetitive Peak Voltage (V): 200-4500
- Average On-state Current (A): 680-4010
- Operating Junction Temperature (℃): 125
Bidirectional Thyristor
Introduction:
It has the function of two ordinary thyristors connected in anti-parallel. The voltage rating is from 1200V to 8500V, with sizes ranging from 1.5 inches to 5 inches.
Main Parameters:
- Reverse repetitive peak voltage (V): 600-5600
- Forward average current (A): 180-2560
- Operating junction temperature (℃): 125
Integrated Gate-Commutated Thyristor (IGCT)
Introduction:
IGCT-Integrated Gate-Commutated Thyristor utilizes new technologies such as buffer layer, transparent anode, and hard gate drive. It is a medium-to-high voltage switching device suitable for power conversion equipment above 5MVA.
Main Parameters:
- Reverse repetitive peak voltage (V): 2500-6500
- Forward average current (A): 1700-3840 Operating junction temperature (℃): 90-125